Multi layer alignment and overlay target and measurement method

ABSTRACT

A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the manufacture of integrated circuitsand, in particular, to a method and system for determining alignment oroverlay error of integrated circuit fields within and between circuitlayers made by a lithographic process.

2. Description of Related Art

Semiconductor manufacturing requires the sequential patterning ofprocess layers on a single semiconductor wafer. Exposure tools known assteppers print multiple integrated circuit patterns or fields (alsoknown as product cells) by lithographic methods on successive layers ofthe wafer. These steppers typically pattern different layers by applyingstep and repeat lithographic exposure or step and scan lithographicexposure in which the full area of the wafer is patterned by sequentialexposure of the stepper fields containing one or more integratedcircuits. Typically, 20-50 layers are required to create an integratedcircuit. In some cases, multiple masks are required to pattern a singlelayer.

For the purposes of this application, the “alignment” and “overlay” ofsequential patterning steps are distinguished as follows. Alignment isthe position of an existing wafer target with respect to the exposuretool. Alignment error is the deviation of the location of the Wafertarget from its designed location, as determined by the alignment systemof the exposure tool. Alignment to an existing layer (the aligned-tolayer) is followed by the exposure that prints a new layer. On the otherhand, overlay is the relative position among two or more patternsproduced by successive exposures; most commonly, the relative positionof the current layer and the aligned-to layer. Overlay error is thedeviation of the relative position among patterns from their designedrelative positions, as determined by an overlay metrology tool. Toensure circuit functionality, overlay errors must be minimized among allwafer patterns, consistent with the ground rules of the most criticalcircuit devices. As a rule of thumb, the overlay error between any pairof layers must be less than 40% of the minimum dimension. Thus,acceptable yield at the 70 nm node implies a layer-to-layer overlaytolerance of less than 30 nm. Achievement of such tight overlaytolerances over 300 mm wafers requires control of both layer-to-layerand within-layer overlay error, as described in U.S. Pat. Nos. 5,877,861and 6,638,671.

Alignment and overlay both require specialized targets on each layer.The targets are placed in inactive areas of the wafer, either within thechip boundary or in the narrow dicing channel (kerf) that separatesadjacent chips. In principle, alignment could use the prior layercomponents of the overlay target as align-to patterns. In practice,alignment and overlay metrology systems often require different targetdesigns and locations. Overlay targets can be comprised of sub-patternsfrom both the same and different masks. The images are analyzed todetermine the relative layer-to-layer and within-layer placement of thesub-patterns among the various mask layers printed on the wafer. Eachdetermination of overlay error requires paired sub-patterns within atarget whose relative position can be measured. From the overlaymeasurement perspective, therefore, the effective number of layers canbe double the number of masks used in the patterning process. For thistechnical specification, the term layer is defined as any patterningstep that requires a unique set of overlay sub-patterns.

The conventional nested box, frame or bar target used on successivelithographic layers A, B and C, as illustrated in FIG. 1, makesinefficient use of space, since relatively few can fit in the imagefield of view (FOV), and does not minimize proximity effects.Furthermore, successive layers A, B, and C are unequally represented bypattern length. Grating targets used on successive lithographic layers Aand B, such as those shown in FIG. 2, are not optimized for nested orsymmetric array layout.

Ideally, a target system to determine alignment and overlay errorbetween lithographically produced integrated circuit fields on the sameor different lithographic levels would be able to measure alignment andoverlay error among many of the lithographic levels required to createan integrated circuit, and do so using a minimum of wafer surface area.

SUMMARY OF THE INVENTION

Bearing in mind the problems and deficiencies of the prior art, it istherefore an object of the present invention to provide a method andtarget system for determining and minimizing overlay error within thesame or among many lithographic levels required to create an integratedcircuit.

It is another object of the present invention to provide a multi-levellithographic target system that uses a minimum amount of wafer surfacearea.

A further object of the invention is to provide a multi-levellithographic target system that uses a common metrology recipe andsampling across multiple layers.

It is yet another object of the present invention to provide amulti-level lithographic target system that efficiently utilizes thefield of view of the alignment system or overlay metrology tool.

Still other objects and advantages of the invention will in part beobvious and will in part be apparent from the specification.

The above and other objects, which will be apparent to those skilled inart, are achieved in the present invention which is directed to a targetsystem for determining positioning error between lithographicallyproduced integrated circuit fields on at least one lithographic level.The target system includes a first target pattern on a lithographicfield containing an integrated circuit pattern, with the first targetpattern comprising a plurality of sub-patterns symmetric about a firsttarget pattern center and at a same first distance from the first targetpattern center. The target system also includes a second target patternon a different lithographic field containing an integrated circuitpattern, with the second target pattern comprising a plurality ofsub-patterns symmetric about a second target pattern center and at asame second distance from the second target pattern center. The secondtarget pattern center is intended to be at the same location as thefirst target pattern center. The second distance is the same as ordifferent from the first distance, and the sub-patterns of the secondtarget pattern are substantially non-overlapping with the sub-patternsof the first target pattern. The center of the first target pattern andthe center of the second target pattern may be determined and comparedto determine positioning error between the lithographic fields.

The target patterns may be created on the lithographic fields on thesame lithographic level or on different lithographic levels. The targetpatterns may be located at corners of a geometric shape, such as asquare.

The target system may further include, on a same lithographic level oron a different lithographic level, a pattern central to a target patternof the lithographic level, the central pattern being different from thesub-patterns.

The sub-patterns may comprise elements symmetric about x- and y-axes.The sub-patterns may form a cross shape having an open center, and thecross shape may have arms comprising a single element or a plurality ofelements. The elements of each sub-pattern may be used to determinecenters of the sub-patterns, and the sub-pattern centers may be used todetermine the target pattern centers.

If the center of the first target pattern is considered to be at theorigin of an orthogonal grid of pitch p, the sub-patterns of the firsttarget pattern may have coordinates of:

(−M, N) p, (N, M) p, (M, −N) p and (−N, −M) p,

where N and M are integers, and the distance of each first targetsubpattern from the center of the first target pattern is defined by theequation:

r=p√(N²+M²),

and wherein the sub-patterns of the second target pattern may havecoordinates of:

(−M+m, N+n) p, (N+n, M+m) p, (M+m, −N+n) p and (−N+n, −M+m) p,

where n and m are integers, and

|n|+|m|=2i,

where i is an integer.

In another aspect, the present invention is directed to a method ofdetermining positioning error between lithographically producedintegrated circuit fields on at least one lithographic level. The methodincludes first creating the target patterns described above. The methodthen comprises determining the center of the first target pattern andthe center of the second target pattern, and measuring positioning errorbetween the lithographic fields by comparing locations of the firsttarget pattern center and the second target pattern center.

The method may further include creating at least one additional targetpattern on at least one additional lithographic level. The at least oneadditional target pattern comprises a plurality of sub-patternssymmetric about an additional target pattern center and at a samedistance from the additional target pattern center. The additionaltarget pattern center is intended to be at the same location as thefirst and second target pattern centers. The distance of the additionalsub-patterns from the additional target center may be the same as ordifferent from both the first and second distances. The sub-patterns ofthe additional target pattern are substantially non-overlapping with thesub-patterns of the first and second target patterns. The method thenincludes determining the center of the additional target pattern andmeasuring positioning error between the lithographic fields by comparinglocations of the first, second and additional target pattern centers.

The method may also include determining the center of each sub-pattern,and using the center of the sub-patterns to determine the center of eachof the target patterns.

The method may further include creating on the same lithographic level,or on a different lithographic level, a pattern central to a targetpattern of the lithographic level, with the central pattern beingdifferent from the sub-patterns. The method then includes identifyingthe central pattern prior to determining the centers of the first andsecond target patterns.

The method may also include providing at least one additional targetpattern on a same or different lithographic level as the first or secondtarget pattern, with the additional target pattern overlying the firstand second target patterns. The at least one additional target patterncomprises a plurality of sub-patterns symmetric about an additionaltarget pattern center and at a same distance from an additional targetpattern center. The additional target pattern center is intended to beat the same location as the first and second target pattern centers. Thedistance of the additional sub-patterns from the additional targetcenter is the same as or different from both the first and seconddistances. The sub-patterns of the additional target pattern aresubstantially non-overlapping with the sub-patterns of the first andsecond target patterns. The method then includes using patternrecognition software, capturing an image of the additional pattern;determining centers of the sub-patterns of the additional targetpattern; identifying the sub-patterns belonging to the additional targetpattern; using the centers of the sub-patterns belonging to theadditional target pattern, determining the center of the additionaltarget pattern; and measuring positioning error between the lithographicfields by comparing locations of the first, second and additional targetpattern centers.

BRIEF DESCRIPTION OF THE DRAWINGS

The features of the invention believed to be novel and the elementscharacteristic of the invention are set forth with particularity in theappended claims. The figures are for illustration purposes only and arenot drawn to scale. The invention itself, however, both as toorganization and method of operation, may best be understood byreference to the detailed description which follows taken in conjunctionwith the accompanying drawings in which:

FIG. 1 is a top plan view of the sequencing of nested targets onsuccessive lithographic layers in the prior art.

FIG. 2 is a top plan view of the use of grating targets on successivelithographic layers in the prior art.

FIG. 3 is a top plan view of the layout of one embodiment ofsub-patterns in a target pattern on a single lithographic layer.

FIG. 4 is a top plan view of the layout of target patterns of the typeshown in FIG. 3 used on successive lithographic layers A through F.

FIG. 5 is a top plan view of overlapped target patterns of the typeshown in FIG. 3 on 28 successive lithographic layers.

FIG. 6 is a close-up view showing detail of the central portion of theoverlapped target patterns of FIG. 5.

FIG. 7 is a top plan view showing the rotation of a target pattern inone quadrant by increments of 90 degrees.

FIG. 8 is a top plan view of showing a group of targets rotated inincrements of 90 degrees on all four sides of a rectangular circuit.

FIGS. 9 a, 9 b and 9 c show alternate embodiments of sub-patterns thatmay be used in the present invention.

FIG. 10 is a photomicrograph of a simulated metrology tool image of a28-layer target, of the type shown in FIG. 5.

FIG. 11 is a photomicrograph of an actual metrology tool image of a28-layer target at a post-gate implant layer.

DESCRIPTION OF THE PREFERRED EMBODIMENT(S)

In describing the preferred embodiment of the present invention,reference will be made herein to FIGS. 3-11 of the drawings in whichlike numerals refer to like features of the invention.

To support improved overlay optimization and minimize the area requiredfor overlay targets, it has been found that more than two sub-patternsshould be included within a single target. Such multi-layer overlaytargets provide benefits to the IC manufacturer such as simultaneousoverlay measurement among multiple layers, improved overlay optimizationacross multiple layers, improved correlation of target metrology towithin chip overlay, target area minimization, and common metrologyrecipe and sampling across multiple layers. The terms “lithographiclayer” and “lithographic level” are used interchangeably herein.

The image field of view (FOV) can accommodate multiple instance of anysuitably small sub-pattern. To achieve optimized metrology performanceat maximum packing density for current overlay tooling; however, it isdesirable to have an array layout that most efficiently utilizes theFOV. Such an array layout should also have a common center for alllayers eliminating the need for layer to layer calibration and radialsymmetry minimizes the distorting effects of metrology tool lensaberrations. A 90/180/270 degree rotation invariance allows flexibilityin placing target groups around the chip. The array layout should alsomaximize the distance among sub-patterns, minimize asymmetric proximityeffects, and use sub-patterns that are designed for optimum nesting andprocess compatibility. Central pattern recognition is also desirable, asit enables precise target centering in the FOV, so that the full FOV canbe utilized.

The target system of the present invention places a plurality ofsub-patterns at a constant radial distance about a common center, suchthat the sub-patterns are symmetric about a target pattern center andpreferably define the corners of a geometric shape, more preferably asquare. Other geometric shapes may also be used, with the sub-patternslocated at the corners of the shapes. The sub-patterns can be anyfeature or combination of features that is symmetric about the x-y axes,such as a cross, circle, square, square grid, and the like. The cross isthe simplest among the sub-pattern options.

As shown in FIG. 3, a one embodiment of a target pattern 20 inaccordance with the present invention is shown on a single lithographiclayer 22. In an actual wafer production, lithographic level 22 containsan integrated circuit field (not shown), and target pattern 20 islocated in an inactive area of the wafer either within the chip boundaryor in the kerf region. Target pattern 20 forms a square superimposedover a regular orthogonal grid of pitch p. Sub-patterns 24 comprisecrosses located at the corners of the square whose center is at theorigin of the x- and y-axes. The length of the line segments making upthe sub-pattern crosses is shown as dimension D. The x-y location ofeach sub-pattern from the center (0, 0) of the square are integermultiples (N, M) of p. The centers of the sub-patterns are located at adistance, radius r, from the center of the target pattern

r=p√(N ² +M ²)

As the targets are created on each of the different lithographic layerscontaining the other portions of the integrated circuit, the (N, M)values are incremented by integers (n, m). Each layer corresponds tounique values of (N, M). Radial symmetry of the target is maintained ateach layer. The radii of the sub-patterns may be the same or differentfor each lithographic layer and the centers of the sub-patterns of eachtarget on each layer define a unique radius for the target on a layer.Under the constraint that the sum of the absolute values of theincrements are even, i.e,

|n|+|m|=2i

for integer i, superposition of the sub-patterns over multiple layersdefines an overlay target in the form of a close-packed diagonal array.As shown in FIG. 4, target patterns 20 a, 20 b, 20 c, 20 d, 20 e and 20f are formed on lithographic layers A, B, C, D, E and F, respectively.The targets of layers A through E are formed in a square pattern asdescribe above; the target of layer F is a single sub-pattern cross atthe center of the overlaid array of targets. The individual targets 20a, 20 b, 20 c, 20 d, 20 e and 20 f are located on their respectivelayers so that they would all have the same center location if thelayers were perfectly aligned. Instead of being located on differentlayers, some of the targets may be overlaid or “stitched” together fromdifferent patterns in different fields lithographically formed on thesame layer. Each of the target patterns 20 a, 20 b, 20 c, 20 d, and 20 eis incremented from the one preceding it in the manner described above.After the successive lithographic layers are formed over one another,the target patterns are overlaid on one another as shown by combinedtarget pattern array 30. The cross sub-patterns do not overlap in thearray provided the cross dimension D<2 p.

The preferred layer alignment measurement method consists of determiningthe center of each printed sub-pattern, using those sub-pattern centersto determine the center of the square defined by the four sub-patterncenters at each layer, and then determining the pair-wise difference inx and y values among the centers of all of the squares to determinealignment error between the integrated circuit fields on the differentlithographic levels.

An embodiment of a fully populated overlay target array 30′ with sidedimension S of 46 μm is shown in FIG. 5. Target array 30′ is designed tofit within a 50 μm square FOV, and a detailed view of the target center32 is shown in FIG. 6. Individual cross shaped sub-patterns have arm 26widths t of 0.5 μm, and central opening spacing u of 1.0 μm. For pitch pof 3 μm and sub-pattern height and width D of 4 μm, 28 layers are shownrepresented within the single target array 30′. A chevron-shapesub-pattern 24 a with arms at an angle α of 45° marks the center oftarget array 30′ to provide a pattern recognition mark distinguishablefrom the surrounding sub-pattern crosses. Center sub-pattern 24 a may beformed on one of the layers having a target pattern, or on a differentlayer.

With the exception of the pattern recognition chevron, the target ofFIG. 5 is invariant to rotation in increments of 90 degrees. Thisfacilitates both the target design and target placement around theperimeter of the circuit. The target design requires layout of only onequadrant of the target. The three additional quadrants are then createdby rotating the first quadrant in increments of 90 degrees, as shown inFIG. 7, where the letter “F” represents the orientation of quadrant oftarget group 40. Furthermore, a group of targets 40 representing theentire set of possible pattern layers can be designed in one orientationto fit within the kerf on one side of the rectangular circuit area 42and rotated in increments of 90 degrees for placement on the other threesides of the circuit, as shown in FIG. 8. That the pattern recognitionchevron in the center of each of the target groups then serves as anarrow pointing to the circuit, thus providing a useful indicator duringoverlay recipe build.

Central pattern recognition enables the most robust image capture andcentering by otherwise conventional optical pattern recognitionsoftware. Using optical pattern recognition software, one would firstcenter and capture the image of the overlaid target array. From thatimage, one would then determine sub-pattern (cross) centers usingconventional threshold or correlation algorithms operating on the imagesof each sub-pattern. Using the sub-pattern centers, one would thendetermine, based on the known layout and layer identification(maintained in a database that is accessible at the time ofmeasurement), which sub-patterns define each target pattern on alithographic field or layer, and then determine the target pattern shape(square) centers for each lithographic field or layer. Using the centerlocations for each target pattern on each field or layer, one would thendetermine pair-wise differences among shape (square) centers, i.e.,alignment or overlay error between each adjacent field or layer. Thecenter locations of the sub-patterns that define the apices of thetarget shape also enable determination of the deviation of each shapefrom its nominal dimensions. This serves as a useful metrology andprocess diagnostic.

To improve process compatibility the center of each cross sub-pattern 24is not patterned, and consists of arms 26 extending away from an opencenter 25, as shown in FIG. 9 a. The target sub-patterns may also becomprised of smaller, ground-rule compatible elements as illustrated byspaced parallel lines 28 forming the cross arms of sub-pattern 24′ inFIG. 9 b, and the spaced contacts or posts 29 forming the cross arms ofsub-pattern 24″ in FIG. 9 c.

In general, the maximum value of the integer indices within a square FOVof dimension S is given by:

N _(max) =M _(max)≦(S/2p)−1

An important measure of the target effectiveness is the number of layersthat can be represented within a single target, L_(max). For theconventional nested frame target of FIG. 1, L_(max)=N_(max) increasesonly linearly with the ratio S/2 p, so that L_(max)=7 for the same FOVand pitch as the L_(max)=28 target of FIG. 5. In other words, thepresent invention permits a target of a given size to determine thealignment of 28 layers, as opposed to only seven layers using the priorart target of FIG. 1. For the target system of the present invention,the maximum number of layers L_(max) is given by:

L _(max)=(N _(max)/2)(N _(max)+1)

Thus, L_(max)>N_(max) increases quadratically with the ratio S/2 p. Forexample, using p=2.5 μm while maintaining S=50 μm allows Lmax to equal45.

The multi-layer target system of the present invention enables rapid androbust optimization of overlay metrology throughout the lithographicmanufacturing process. The ability to determine alignment of 25 to 50layers enables overlay metrology through the entire circuitmanufacturing process to be conducted using a single target, therebyreducing the required target area by a factor greater than 20.Furthermore, having a single target reduces the number of metrology toolrecipes required by the same factor, while enforcing a common samplingacross all layers. In turn, by sustaining a fixed set of measurementlocations, common sampling simplifies the task of correlating theoverlay error measured in the kerf to errors observed within the chip.

A simulation of a 28 layer target using the FIG. 5 target imaged in ametrology tool using broadband illumination (400-700 nm) and a 0.5numerical aperture is shown in FIG. 10. In this case the patternrecognition mark in the target center is a square rather than a chevron.

While a typical chip utilizes about 20 masking layers, a manufacturingtechnology may allow on the order of 100 layers for the customization ofspecific chips. The proposed target must accommodate all of theselayers. Since an individual target of the design shown in FIG. 5accommodates 28 layers (FIG. 10), three or four such targets arerequired to accommodate the full set of layers for a given manufacturingtechnology. The method of assigning layer locations among and within thetargets can be captured in a set of layer assignment guidelines, asfollows:

Among targets, Group layers by their sequential order. Front-end processlayers, e.g., shallow trench isolation (STI), poly gate, and implants,can be grouped in a first set of one or more targets. Back-endinterconnect and via layers can be grouped in a second set of one ormore targets. Front-end to back-end transition layers should appear in apair of targets; namely, the layer to which the back end aligns shouldbe in both the front-end and back-end targets.

Within targets: Positioning of each set of layer sub-patterns or markswithin a given target need not be sequential. In the front-end target,implanted patterns are typically not detectable by alignment systems oroverlay tools; so, to minimize proximity effects, it is advisable to useimplant layers as spacers between etched layers. Implants whose energyis sufficiently low not to leave discernable patterns post resist stripcan be stacked in the same location. The image of an actual 28-layertarget 60 at a post-gate implant layer is shown in FIG. 11. The currentlayer implant mark 64 b is clearly visible. The previous high energyimplant mark 62 is barely visible (shown with added phantom lines),whereas all of the previous etched layers 64 a, 64 c, 64 d, and 64 e areclearly visible. None of the previous low-energy implant marks arevisible. The STI layer mark 64 e and gate layer mark 64 d include marks64 a and 64 c, respectively, overlaid or stitched from patterns onadjacent fields on the same respective layer to monitor and controlwithin-layer field shape.

The principles of the inventive target design apply to both alignmentand overlay targets. Given alignment system and overlay metrology toolcompatibility, the same target can be used for both purposes.

Thus, the present invention achieves the goals and objects describedabove. It provides an improved method and target system for determiningoverlay or alignment error between different fields in the samelithographic level or among the many lithographic levels required tocreate an integrated circuit. The multi-field or level lithographictarget system described herein efficiently utilizes the field of view ofthe metrology tool, uses a minimum amount of wafer surface area, anduses a common metrology recipe and sampling across multiple layers. Thearray layout's common center for all layers is recognizable by opticalpattern recognition, enables precise target centering in the FOV,eliminates the need for layer to layer calibration and its radialsymmetry minimizes the distorting effects of metrology tool lensaberrations. Moreover, the 90/180/270 degree rotation invariance allowsflexibility in placing target groups around the chip, and the arraylayout maximizes the distance among sub-patterns, minimizes asymmetricproximity effects, and uses sub-patterns that are designed for optimumnesting and process compatibility.

While the present invention has been particularly described, inconjunction with a specific preferred embodiment, it is evident thatmany alternatives, modifications and variations will be apparent tothose skilled in the art in light of the foregoing description. It istherefore contemplated that the appended claims will embrace any suchalternatives, modifications and variations as falling within the truescope and spirit of the present invention.

1. A method of determining positioning error between lithographicallyproduced integrated circuit fields on at least one lithographic level ofa wafer using a target thereon comprising: creating a first targetpattern on a lithographic field containing an integrated circuitpattern, the first target pattern comprising a plurality of sub-patternssymmetric about a first target pattern center and at a same firstdistance from the first target pattern center; creating a second targetpattern on a different lithographic field containing an integratedcircuit pattern, the second target pattern comprising a plurality ofsub-patterns symmetric about a second target pattern center and at asame second distance from the second target pattern center, the secondtarget pattern center intended to be at the same location as the firsttarget pattern center, the second distance being the same or differentthan the first distance and the sub-patterns of the second targetpattern being substantially non-overlapping with the sub-patterns of thefirst target pattern; determining the center of the first target patternand the center of the second target pattern; and measuring positioningerror between the lithographic fields by comparing locations of thefirst target pattern center and the second target pattern center. 2.(canceled)
 3. The method of claim 1 wherein the target patterns arecreated on the lithographic fields on different lithographic levels. 4.The method of claim 1 further including creating at least one additionaltarget pattern on at least one additional lithographic level, the atleast one additional target pattern comprising a plurality ofsub-patterns symmetric about an additional target pattern center and ata same distance from the additional target pattern center, theadditional target pattern center intended to be at the same location asthe first and second target pattern centers, the distance of theadditional sub-patterns from the additional target center being the sameor different than both the first and second distances and thesub-patterns of the additional target pattern being substantiallynon-overlapping with the sub-patterns of the first and second targetpatterns, determining the center of the additional target pattern andmeasuring positioning error between the lithographic fields by comparinglocations of the first, second and additional target pattern centers. 5.The method of claim 1 wherein the sub-patterns comprise elementssymmetric about x- and y-axes.
 6. (canceled)
 7. The method of claim 1wherein the sub-patterns form a cross shape having an open center. 8.The method of claim 1 wherein the sub-patterns form a cross shape havingan open center, the cross shape having arms comprising a plurality ofelements.
 9. The method of claim 1 further including creating on thesame lithographic level, or on a different lithographic level, a patterncentral to a target pattern of the lithographic level, the centralpattern being different from the sub-patterns, and identifying thecentral pattern prior to determining the centers of the first and secondtarget patterns.
 10. (canceled)
 11. (canceled)
 12. The method of claim 1wherein the target patterns are located at corners of a geometric shape.13. A target system on a lithographic field of a wafer for determiningpositioning error between lithographically produced integrated circuitfields on at least one lithographic level of the wafer comprising: afirst target pattern on a lithographic field containing an integratedcircuit pattern, the first target pattern comprising a plurality ofsub-patterns symmetric about a first target pattern center and at a samefirst distance from the first target pattern center; and a second targetpattern on a different lithographic field containing an integratedcircuit pattern, the second target pattern comprising a plurality ofsub-patterns symmetric about a second target pattern center and at asame second distance from the second target pattern center, the secondtarget pattern center intended to be at the same location as the firsttarget pattern center, the second distance being the same or differentthan the first distance and the sub-patterns of the second targetpattern being substantially non-overlapping with the sub-patterns of thefirst target pattern, wherein the center of the first target pattern andthe center of the second target pattern may be determined and comparedto determine positioning error between the lithographic fields.
 14. Thetarget system of claim 13 wherein the target patterns are located atcorners of a geometric shape.
 15. The target system of claim 13 furtherincluding at least one additional target pattern on at least oneadditional lithographic level, the at least one target patterncomprising a plurality of sub-patterns symmetric about an additionaltarget pattern center and at a same distance from an additional targetpattern center, the additional target pattern center intended to be atthe same location as the first and second target pattern centers, thedistance of the additional sub-patterns from the additional targetcenter being the same or different than both the first and seconddistances and the sub-patterns of the additional target pattern beingsubstantially non-overlapping with the sub-patterns of the first andsecond target patterns, wherein the center of the additional targetpattern and the centers of the first and second target patterns may bedetermined and compared to determine positioning error between thelithographic levels.
 16. The target system of claim 13 wherein thesub-patterns comprise elements symmetric about x- and y-axes, whereinthe elements of each sub-pattern may be used to determine centers of thesub-patterns, and wherein the sub-pattern centers may be used todetermine the target pattern centers.
 17. The target system of claim 16wherein the sub-patterns form a cross shape having an open center. 18.The target system of claim 16 wherein the sub-patterns form a crossshape having an open center, the cross shape having arms comprising aplurality of elements.
 19. The target system of claim 13 furtherincluding, on a same lithographic level or on a different lithographiclevel, a pattern central to a target pattern of the lithographic level,the central pattern being different from the sub-patterns.
 20. Thetarget system of claim 14 wherein, if the center of the first targetpattern is at the origin of an orthogonal grid of pitch p, thesub-patterns of the first target pattern have coordinates of:(−M, N)p, (N, M)p, (M, −N)p and (−N, −M)p, where N and M are integers,and the distance of each first target subpattern from the center of thefirst target pattern is defined by the equation:r=p√(N ² +M ²), and wherein the sub-patterns of the second targetpattern have coordinates of:(−M+m, N+n)p, (N+n, M+m)p, (M+m, −N+n)p and (−N+n, −M+m)p, where n and mare integers, and|n|+|m|=2i, where i is an integer.